central semiconductor corp. tm process CP566 small signal transistor pnp - silicon chopper transistor chip princip al device types cmpt404a mps404a process epitaxial planar die size 31.5 x 31.5 mils die thickness 11 mils base bonding pad area 7.8 x 6.2 mils emitter bonding pad area 8.0 x 5.3 mils top side metalization al - 12,000? back side metalization au - 10,000? process details 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com backside collector geometry r2 (1-august 2002) gross die per 4 inch w afer 11,380
central semiconductor corp. tm process CP566 typical electrical characteristics 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com r2 (1-august 2002)
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